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Services

For the last 30 years, we have been supplying the electronics industry around the world with products of the purest quality, striving to expand our global presence, keep up with the fast pace of this ever-evolving industry?and build strong relationships with the most respected of manufacturers.

Our commercial and technical teams will provide the help you need to identify new opportunities for this highly dynamic and ever-changing market, driven by innovation, progress and consumer demand for new products.

Our services include:

Gallium recycling

We?will buy your:

  • GaAs scraps, both ingot and wafers
  • Gallium scraps

for recycling.

Contact us for further information.
?

GaAs, InP reclaim

III/V Reclaim removes all layers and polishes the surface using chemo-mechanical single-side processes. The following cleaning steps result in a thin homogeneous oxide. A final inspection for defects ensures a continuously high level of quality. Our wafers can be used in epitaxy directly without any additional pretreatment.

Total removal in our reclaim process is at least 10 microns depending on incoming geometry, damage depth and in case of small volume orders the thickness variation of the wafers.

Our service comprises of:

  • Reclaim of GaAs and InP: all sizes from 1" to 150 mm, all formats
  • Polishing of raw slices
  • Double side polishing
  • Cheap special made wafers
  • Extra thin slices
  • Backside thinning of fully structured wafers


SIMS analysis

  • Advanced SIMS (Secondary Ion Mass Spectrometry) of almost any solid material
  • Surface analysis and depth profiling
  • High sensitivity, extreme dynamic concentration range
  • High depth resolution and ultimate mass separation
  • Can measure trace elements undetected by other techniques
  • Both imaging modes: ion microscope and ion microprobe

More than 20 years ago, Castaing and Slodzian developed an instrument combining ionic sputtering and magnetic mass spectrometry: a primary energetic ion beam sputters the sample surface. Secondary ions are generated in this sputtering process and are extracted from the sample. They are then analysed by a mass spectrometer. Thus SIMS (Secondary Ion Mass Spectrometry) was born.

It is unrivaled for its detection limits:

  • Excellent depth resolution (to within a few per cent)
  • Full periodic table coverage (including hydrogen)
  • Rapid ion image acquisition capabilities

Dynamic SIMS, with a magnetic sector, combines almost all possible requirements:

Sensitivity:

Traces, as well as major elements, can be measured?simultaneously?with this instrument. A 6-decade dynamic range on concentration is routinely available.

Depth resolution:

Quantum wells a few nanometers thick can easily be resolved in depth profiling.

Mass resolution:

Often, elements or molecules have similar masses and interfere in analysis. High mass resolution clarifies these situations. Extreme high mass resolution is obtained with our set-up.

Samples:

  • Analysed area for profiles: ?60 to 8 micrometres
  • Sample size 0.5 x 0.5 mm2?to ?50 mm
  • Chips can be analysed even after processing

Ion microscope:

The lateral distribution of the ions happens to be maintained through the spectrometer so that the mass resolved image of the secondary ions can be projected onto a detection channel plate or, alternatively, on a resistive anode encoder (RAE). The sample is illuminated by a large diameter beam. An elemental image, with submicron lateral resolution can thus be recorded with an image field from 50 to 250 μm and a detection limit in the ppm range.

Analytical results are returned within five business days, with analysis in less than 24 hours available upon special request. Complete security is guaranteed with respect to the analysis of materials. The service includes a full report and E-mailed data.


RBS analysis

Highest integrity analysis of thin-film chemical composition to the European semiconductor and material industry.

  • Advanced RBS (Rutherford Backscattering Spectrometry) of almost any solid material
  • Surface analysis and depth profiling
  • High sensitivity, extreme dynamic concentration range
  • High depth resolution and ultimate mass separation
  • Can measure trace elements undetected by other techniques
  • Both imaging modes: ion microscope and ion microprobe

In Rutherford Backscattering Spectrometry, a high energy beam of He++?ions (energy > 2 MeV) is partly backscattered by the near surface region of the sample. These ions are analysed by a solid state detector. Both composition and depth distribution of elements in the sample can be deduced. Also, quantitative measurement of crystal damage can be obtained.

Although its sensitivity is not comparable to that of SIMS, RBS provides very valuable complementary informations:

  • Direct quantitative analysis ( no standards needed) with detection limits down to 0.1% for heavy impurities in light matrices
  • Crystalline damage measurement in crystals
  • Analysis of non-conducting organic or inorganic solids and powders


Film deposits (with or without mask)

Metals:

  • sputtering: Al, AlSi, AlSiCu, Ti, Cr, NiFe, Ag,W, Cu, Al2O3, Hf, Mg, Mo, Ni, NiCr, Ta, WTi, Zr
  • thermal evaporation: any metal upon request
  • electroplated: Cu, Au, Ni

Semi-conductors:

  • sputtering: C, Si, SiO2, Ge, GaSb, InAs, InSb
  • oxides: thermal growth, LPCVD, LTO, PECVD (TEOS)
  • nitrides: LPCVD, PECVD (SiON)
  • polysilicon: LPCVD

Other deposits:

  • photoresist
  • polyimide
  • BCB

Photolithography service available.


Ion implants (with or without mask)

Any species on any substrate: up to 150mm (200mm upon request), up to 280 keV.

Special substrates are processable (crystals, blades,...).

Low energy implant (down to 100 eV) upon request.


Etching (with or without mask)

Wet etching for:

  • metal
  • silicon (TMAH etching CMOS compatible), nitride, oxide

Plasma etching:

  • RIE, DRIE
  • O2 plasma

Ion beam etching.

Contact Electronics

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